vishay siliconix SI4630DY document number: 73685 s09-0138-rev. c, 02-feb-09 www.vishay.com 1 n-channel 25-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ) 25 0.0027 at v gs = 10 v 36 49 nc 0.0032 at v gs = 4.5 v 29 notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 80 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 25 v gate-source voltage v gs 16 continuous drain current (t j = 150 c) t c = 25 c i d 40 a t c = 70 c 32 t a = 25 c 27 b, c t a = 70 c 21 b, c pulsed drain current i dm 70 continuous source-drain diode current t c = 25 c i s 7.0 t a = 25 c 3.0 b, c single pulse avalanche current l = 0.1 mh i as 30 avalanche energy e as 45 mj maximum power dissipation t c = 25 c p d 7.8 w t c = 70 c 5.0 t a = 25 c 3.5 b, c t a = 70 c 2.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 10 s r thja 29 35 c/w maximum junction-to-foot (drain) steady state r thjf 13 16 n -channel mosfet g d s so-8 sd sd sd gd 5 6 7 8 to p v ie w 2 3 4 1 orderin g information: SI4630DY-t1-e3 (lead (p b )-free) SI4630DY-t1-ge3 (lead (p b )-free and halogen-free) features ? halogen-free according to iec 61249-2-21 available ?trenchfet ? power mosfet ? 100 % r g te s t e d applications ? synchronous buck - low side - notebook - server - workstation ? synchronous rectifier - pol
www.vishay.com 2 document number: 73685 s09-0138-rev. c, 02-feb-09 vishay siliconix SI4630DY notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 25 v v ds temperature coefficient v ds /t j i d = 250 a 28 mv/c v gs(th) temperature coefficient v gs(th) /t j - 6 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 2.2 v gate-source leakage i gss v ds = 0 v, v gs = 16 v 100 na zero gate voltage drain current i dss v ds = 25 v, v gs = 0 v 1 a v ds = 25 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.0022 0.0027 v gs = 4.5 v, i d = 15 a 0.0026 0.0032 forward transconductance a g fs v ds = 15 v, i d = 20 a 120 s dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 6670 pf output capacitance c oss 997 reverse transfer capacitance c rss 531 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 20 a 107.5 161 nc v ds = 15 v, v gs = 4.5 v, i d = 20 a 49 73 gate-source charge q gs 15.7 gate-drain charge q gd 13.6 gate resistance r g f = 1 mhz 1.5 2.25 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 4.5 v, r g = 1 37 56 ns rise time t r 122 185 turn-off delaytime t d(off) 47 71 fall time t f 15 23 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 10 v, r g = 1 17 26 rise time t r 93 140 turn-off delaytime t d(off) 60 90 fall time t f 915 drain-source body diode characteristics continous source-drain diode current i s t c = 25 c 7 a pulse diode forward current a i sm 70 body diode voltage v sd i s = 3 a 0.72 1.1 v body diode reverse recovery time t rr i f = 13 a, di/dt = 100 a/s, t j = 25 c 47 70 ns body diode reverse recovery charge q rr 50 75 nc reverse recovery fall time t a 23 ns reverse recovery rise time t b 24
document number: 73685 s09-0138-rev. c, 02-feb-09 www.vishay.com 3 vishay siliconix SI4630DY typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 10 20 30 40 50 60 7 0 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 10 thr u 3 v v ds - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 0 102030405060 v gs = 10 v i d - drain c u rrent (a) v gs = 4.5 v r ) n o ( s d m ( e c n a t s i s e r - n o -) 0.0022 0.001 8 0.0026 0.0030 0.0034 0 2 4 6 8 10 0 224466 88 110 i d = 20 a ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v s g v ds = 10 v v gs = 20 v v ds = 15 v transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 0.0 0.6 1.2 1. 8 2.4 3.0 25 c t c = 125 c - 55 c v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d c rss 0 1700 3400 5100 6 8 00 8 500 0 5 10 15 20 25 c iss v ds - drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c - c c oss 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v t j - j u nction temperat u re (c) r ) n o ( s d e c n a t s i s e r - n o - ) d e z i l a m r o n ( v gs = 10 v i d = 20 a
www.vishay.com 4 document number: 73685 s09-0138-rev. c, 02-feb-09 vishay siliconix SI4630DY typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 1.0 1.2 0.001 0.00 0.2 0.4 0.6 0. 8 v sd - so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s - i s 0.100 0.010 1.000 10.000 100.000 25 c 150 c - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 t j - temperat u re (c) v ) h t ( s g ) v ( i d = 250 a i d = 5 ma on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 01234567 8 910 v gs - gate-to-so u rce v oltage ( v ) r ) n o ( s d ( e c n a t s i s e r - n o e c r u o s - o t - n i a r d -) 0 . 010 0.00 8 0.006 0.004 0.002 0.000 125 c 25 c 0 120 200 40 8 0 ) w ( r e w o p time (s) 160 1 10 0.1 0.01 0.001 safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 ) a ( t n e r r u c n i a r d - i d 0.1 1 ms t a = 25 c single p u lse 10 ms 100 ms dc v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 1 s 10 s limited b y r ds(on) *
document number: 73685 s09-0138-rev. c, 02-feb-09 www.vishay.com 5 vishay siliconix SI4630DY typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 5 10 15 20 25 30 35 40 45 0 255075100125150 i d ) a ( t n e r r u c n i a r d - t c - case temperat u re (c) package limited power, junction-to-foot 0 2 4 6 8 10 0 25 50 75 100 125 150 t c - case temperat u re (c) r ( w ) e w o p power, junction-to-ambient 0.0 0.4 0. 8 1.2 1.6 2.0 0 25 50 75 100 125 150 t a - am b ient temperat u re (c) r ( w ) e w o p
www.vishay.com 6 document number: 73685 s09-0138-rev. c, 02-feb-09 vishay siliconix SI4630DY typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73685 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 sq u are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 60 c/ w 3. t jm ? t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 normalized thermal transient impedance, junction-to-case 0.1 0.2 d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 single p u lse 0.02 10 0.05
vishay siliconix package information document number: 71192 11-sep-06 www.vishay.com 1 dim millimeters inches min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0808 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all le a d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (g a ge pl a ne) s oic (narrow): 8-lead jedec p a rt n u m b er: m s -012 s
application note 826 vishay siliconix www.vishay.com document number: 72606 22 revision: 21-jan-08 application note recommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) return to index return to index
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